MUN5235DW1T1
- Mfr.Part #
- MUN5235DW1T1
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS 2NPN PREBIAS 0.25W SOT363
- Stock
- 468,252
- In Stock :
- 468,252
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Number of Elements :
- 2
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 187mW
- Lead Free :
- Lead Free
- Number of Pins :
- 6
- Base Part Number :
- MUN52**DW1T
- Max Operating Temperature :
- 150°C
- Max Output Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Continuous Collector Current :
- 100mA
- Max Collector Current :
- 100mA
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Length :
- 2.2mm
- Max Power Dissipation :
- 250mW
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Number of Terminations :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 50V
- Resistor - Emitter Base (R2) :
- 47k Ω
- Operating Supply Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Height :
- 1mm
- JESD-609 Code :
- e3
- Min Operating Temperature :
- -55°C
- Surface Mount :
- yes
- hFE Min :
- 80
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Polarity :
- NPN
- Width :
- 1.35mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 250mV
- Current Rating :
- 100mA
- Element Configuration :
- Dual
- Published :
- 2003
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 6
- Transistor Application :
- SWITCHING
- Resistor - Base (R1) :
- 2.2k Ω
- Current - Collector Cutoff (Max) :
- 500nA
- Datasheets
- MUN5235DW1T1

MUN5235DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at
Features of the MUN5235DW1T1G include:
• Low collector-emitter saturation voltage of 0.25W
• Low collector-emitter voltage of 0.25V
• Low power consumption
• High gain
• High switching speed
• Low noise
• High reliability
Applications of the MUN5235DW1T1G include:
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Medical
• Power management
• Lighting
• Security systems
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