MUN5235DW1T1

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Mfr.Part #
MUN5235DW1T1
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
TRANS 2NPN PREBIAS 0.25W SOT363
Stock
468,252
In Stock :
468,252

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Number of Elements :
2
REACH SVHC :
No SVHC
Power Dissipation :
187mW
Lead Free :
Lead Free
Number of Pins :
6
Base Part Number :
MUN52**DW1T
Max Operating Temperature :
150°C
Max Output Current :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA 10V
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Continuous Collector Current :
100mA
Max Collector Current :
100mA
Transistor Type :
2 NPN - Pre-Biased (Dual)
Length :
2.2mm
Max Power Dissipation :
250mW
Mounting Type :
Surface Mount
Factory Lead Time :
8 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Package / Case :
6-TSSOP, SC-88, SOT-363
Number of Terminations :
6
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
Voltage - Rated DC :
50V
Resistor - Emitter Base (R2) :
47k Ω
Operating Supply Voltage :
50V
Collector Emitter Voltage (VCEO) :
50V
Height :
1mm
JESD-609 Code :
e3
Min Operating Temperature :
-55°C
Surface Mount :
yes
hFE Min :
80
Terminal Form :
Gull wing
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
50V
Polarity :
NPN
Width :
1.35mm
Time@Peak Reflow Temperature-Max (s) :
40
Contact Plating :
Tin
Max Breakdown Voltage :
50V
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
250mV
Current Rating :
100mA
Element Configuration :
Dual
Published :
2003
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300μA, 10mA
Packaging :
Tape and Reel (TR)
Pin Count :
6
Transistor Application :
SWITCHING
Resistor - Base (R1) :
2.2k Ω
Current - Collector Cutoff (Max) :
500nA
Datasheets
MUN5235DW1T1
Introducing Transistors - Bipolar (BJT) - Arrays, Pre-Biased onsemi MUN5235DW1T1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Base Part Number:MUN52**DW1T, Mounting Type:Surface Mount, Package / Case:6-TSSOP, SC-88, SOT-363, Number of Terminations:6, MUN5235DW1T1 pinout, MUN5235DW1T1 datasheet PDF, MUN5235DW1T1 amp .Beyond Transistors - Bipolar (BJT) - Arrays, Pre-Biased onsemi MUN5235DW1T1 ,we also offer PUMD2,125, PUMD2,115, PUMD2,165, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MUN5235DW1T1


MUN5235DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at

The ON Semiconductor MUN5235DW1T1G is a pre-biased, two-NPN transistor array in a SOT-363 package. It is designed for use in low-power, low-voltage applications. The device features a low collector-emitter saturation voltage of 0.25W and a low collector-emitter voltage of 0.25V. It is suitable for use in a wide range of applications, including switching, amplification, and signal conditioning.

Features of the MUN5235DW1T1G include:
• Low collector-emitter saturation voltage of 0.25W
• Low collector-emitter voltage of 0.25V
• Low power consumption
• High gain
• High switching speed
• Low noise
• High reliability

Applications of the MUN5235DW1T1G include:
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Medical
• Power management
• Lighting
• Security systems
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