MUN5234DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Operating Temperature :

150°C

Published :

2009

hFE Min :

80

Min Operating Temperature :

-55°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.14

Element Configuration :

Dual

Resistor - Base (R1) :

22k Ω

Transistor Type :

2 NPN - Pre-Biased (Dual)

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Pins :

6

Base Part Number :

MUN52**DW1T

Resistor - Emitter Base (R2) :

47k Ω

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Polarity :

NPN

Power Dissipation :

187mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Breakdown Voltage :

50V

Current Rating :

100mA

Voltage - Rated DC :

50V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

250mW

Factory Lead Time :

30 Weeks

Pbfree Code :

yes

Surface Mount :

yes

Number of Terminations :

6

Continuous Collector Current :

100mA

JESD-609 Code :

e3

Number of Elements :

2

RoHS Status :

RoHS Compliant