MUN5233T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Contact Plating :

Tin

Base Part Number :

MUN52**T

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

500nA

Voltage - Rated DC :

50V

Current Rating :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Number of Pins :

3

Max Power Dissipation :

202mW

Resistor - Emitter Base (R2) :

47 k Ω

Element Configuration :

Single

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Max Breakdown Voltage :

50V

Continuous Collector Current :

100mA

Package / Case :

SC-70, SOT-323

Factory Lead Time :

5 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Power Dissipation :

202mW

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Number of Elements :

1

Mounting Type :

Surface Mount

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

4.7 k Ω

Radiation Hardening :

No

Lead Free :

Lead Free

Polarity :

NPN

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Min Operating Temperature :

-55°C

Transistor Type :

NPN - Pre-Biased

hFE Min :

80

Surface Mount :

yes

Terminal Position :

Dual

Pin Count :

3

REACH SVHC :

No SVHC

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10