MUN5233DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Lead Free :

Lead Free

Number of Terminations :

6

Transistor Application :

SWITCHING

Surface Mount :

yes

Published :

2005

Transistor Type :

2 NPN - Pre-Biased (Dual)

Element Configuration :

Dual

Max Operating Temperature :

150°C

Voltage - Rated DC :

50V

Factory Lead Time :

8 Weeks

Max Power Dissipation :

250mW

Pbfree Code :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

ECCN Code :

EAR99

Operating Supply Voltage :

50V

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

4.7k Ω

Max Output Current :

100mA

Number of Elements :

2

Power Dissipation :

187mW

Polarity :

NPN

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

100mA

hFE Min :

80

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

47k Ω

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-609 Code :

e3

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Pins :

6

Base Part Number :

MUN52**DW1T

Min Operating Temperature :

-55°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Pin Count :

6

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

500nA

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V