MUN5232T1G
- Mfr.Part #
- MUN5232T1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 202MW SC70-3
- Stock
- 31,673
- In Stock :
- 31,673
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Published :
- 2007
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN - Pre-Biased
- Collector Emitter Breakdown Voltage :
- 50V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current Rating :
- 100mA
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Resistor - Base (R1) :
- 4.7 k Ω
- Collector Emitter Voltage (VCEO) :
- 50V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Min Operating Temperature :
- -55°C
- Transistor Application :
- SWITCHING
- hFE Min :
- 15
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Terminal Position :
- Dual
- Package / Case :
- SC-70, SOT-323
- Continuous Collector Current :
- 100mA
- Polarity :
- NPN
- Voltage - Rated DC :
- 50V
- Power Dissipation :
- 310mW
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Base Part Number :
- MUN52**T
- Halogen Free :
- Halogen Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5mA 10V
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 202mW
- Resistor - Emitter Base (R2) :
- 4.7 k Ω
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 500nA
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Datasheets
- MUN5232T1G

MUN5232T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
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