MUN5231DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

100mA

Collector Emitter Voltage (VCEO) :

50V

Max Operating Temperature :

150°C

Voltage - Rated DC :

50V

Max Power Dissipation :

250mW

Published :

2010

hFE Min :

8

Polarity :

NPN

Resistor - Base (R1) :

2.2k Ω

Transistor Type :

2 NPN - Pre-Biased (Dual)

Package / Case :

6-TSSOP, SC-88, SOT-363

Current - Collector Cutoff (Max) :

500nA

Halogen Free :

Halogen Free

Pin Count :

6

Number of Pins :

6

Surface Mount :

yes

Lead Free :

Lead Free

Number of Elements :

2

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Number of Terminations :

6

Base Part Number :

MUN52**DW1T

Factory Lead Time :

10 Weeks

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-55°C

Terminal Form :

Gull wing

Element Configuration :

Dual

Resistor - Emitter Base (R2) :

2.2k Ω

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Finish :

Tin (Sn)

Power Dissipation :

187mW