MUN5230T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power Dissipation :

202mW

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.95

Lead Free :

Lead Free

Polarity :

NPN

Resistor - Base (R1) :

1 k Ω

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Surface Mount :

yes

Resistor - Emitter Base (R2) :

1 k Ω

Package / Case :

SC-70, SOT-323

Number of Terminations :

3

Current Rating :

100mA

Pin Count :

3

Max Output Current :

100mA

Pbfree Code :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Collector Emitter Voltage (VCEO) :

50V

ECCN Code :

EAR99

Number of Elements :

1

JESD-609 Code :

e3

Transistor Type :

NPN - Pre-Biased

Max Operating Temperature :

150°C

Voltage - Rated DC :

50V

Published :

2009

Min Operating Temperature :

-55°C

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Factory Lead Time :

2 Weeks

Current - Collector Cutoff (Max) :

500nA

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Halogen Free :

Halogen Free

Max Breakdown Voltage :

50V

Continuous Collector Current :

100mA

Radiation Hardening :

No

Number of Pins :

3

Max Power Dissipation :

202mW

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Operating Supply Voltage :

50V

Base Part Number :

MUN52**T

Collector Emitter Breakdown Voltage :

50V