MUN5230T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

1 k Ω

Max Power Dissipation :

202mW

Published :

2009

HTS Code :

8541.21.00.95

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Current Rating :

100mA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Voltage - Rated DC :

50V

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Transistor Type :

NPN - Pre-Biased

Max Operating Temperature :

150°C

Continuous Collector Current :

100mA

Radiation Hardening :

No

Terminal Form :

Gull wing

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Operating Supply Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Max Collector Current :

100mA

Power Dissipation :

202mW

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Max Breakdown Voltage :

50V

Max Output Current :

100mA

Pbfree Code :

yes

Package / Case :

SC-70, SOT-323

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

1 k Ω

Surface Mount :

yes

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Factory Lead Time :

2 Weeks

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

50V

Halogen Free :

Halogen Free

Base Part Number :

MUN52**T

Polarity :

NPN

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V