MUN5230T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Min Operating Temperature :

-55°C

Published :

2009

Number of Terminations :

3

Resistor - Base (R1) :

1 k Ω

Number of Pins :

3

Operating Supply Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Current Rating :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Polarity :

NPN

Pin Count :

3

Lead Free :

Lead Free

Number of Elements :

1

Max Power Dissipation :

202mW

Max Collector Current :

100mA

Power Dissipation :

202mW

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Halogen Free :

Halogen Free

Transistor Type :

NPN - Pre-Biased

Resistor - Emitter Base (R2) :

1 k Ω

JESD-609 Code :

e3

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Voltage - Rated DC :

50V

Max Output Current :

100mA

Max Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Base Part Number :

MUN52**T

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

HTS Code :

8541.21.00.95

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Max Operating Temperature :

150°C

Factory Lead Time :

2 Weeks

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

Package / Case :

SC-70, SOT-323

Continuous Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1