MUN5230DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Frequency :

10kHz

ECCN Code :

EAR99

Height :

1mm

RoHS Status :

ROHS3 Compliant

Max Output Current :

100mA

Published :

2005

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Halogen Free :

Halogen Free

Emitter Base Voltage (VEBO) :

6V

Voltage - Rated DC :

50V

hFE Min :

3

Element Configuration :

Dual

Mounting Type :

Surface Mount

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Polarity :

NPN

Number of Elements :

2

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Surface Mount :

yes

Number of Terminations :

6

Contact Plating :

Tin

Lead Free :

Lead Free

Pin Count :

6

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Width :

1.35mm

Max Collector Current :

100mA

Resistor - Base (R1) :

1k Ω

Collector Emitter Saturation Voltage :

250mV

Resistor - Emitter Base (R2) :

1k Ω

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

8 Weeks

Max Breakdown Voltage :

50V

Number of Pins :

6

Length :

2.2mm

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

100mA

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

250mW

Power Dissipation :

187mW

Current - Collector Cutoff (Max) :

500nA

Base Part Number :

MUN52**DW1T

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Collector Base Voltage (VCBO) :

50V

Operating Supply Voltage :

50V

Continuous Collector Current :

100mA