MUN5216DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Current Rating :

100mA

JESD-609 Code :

e3

Surface Mount :

yes

Resistor - Base (R1) :

4.7k Ω

Current - Collector Cutoff (Max) :

500nA

Terminal Form :

Gull wing

Max Power Dissipation :

250mW

Polarity :

NPN

Power Dissipation :

187mW

Voltage - Rated DC :

50V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Operating Supply Voltage :

50V

Number of Pins :

6

Pbfree Code :

yes

Min Operating Temperature :

-55°C

Number of Terminations :

6

Number of Elements :

2

Contact Plating :

Tin

Max Operating Temperature :

150°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Additional Feature :

BUILT-IN BIAS RESISTOR

Continuous Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Application :

SWITCHING

Published :

2007

Collector Emitter Voltage (VCEO) :

50V

Packaging :

Tape and Reel (TR)

Base Part Number :

MUN52**DW1T

hFE Min :

160

Radiation Hardening :

No

Max Breakdown Voltage :

50V

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Transistor Type :

2 NPN - Pre-Biased (Dual)

Pin Count :

6

Mounting Type :

Surface Mount

Element Configuration :

Dual

Halogen Free :

Halogen Free

Max Collector Current :

100mA

Max Output Current :

100mA