MUN5213DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 NPN - Pre-Biased (Dual)

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

Terminal Form :

Gull wing

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Application :

SWITCHING

Number of Elements :

2

Min Operating Temperature :

-55°C

Current Rating :

100mA

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

100mA

Pin Count :

6

hFE Min :

80

Voltage - Rated DC :

50V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Max Output Current :

100mA

Continuous Collector Current :

100mA

Packaging :

Cut Tape (CT)

Factory Lead Time :

8 Weeks

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Operating Temperature :

150°C

Base Part Number :

MUN52**DW1T

Published :

2005

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Collector Emitter Saturation Voltage :

250mV

Lead Free :

Lead Free

Resistor - Emitter Base (R2) :

47k Ω

Contact Plating :

Tin

Operating Supply Voltage :

50V

Length :

2mm

Collector Emitter Voltage (VCEO) :

50V

Halogen Free :

Halogen Free

Width :

1.25mm

Power Dissipation :

256mW

Height :

900μm

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Max Power Dissipation :

250mW

Surface Mount :

yes

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

47k Ω