MUN5212T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

2.2 k Ω

Number of Elements :

1

Terminal Form :

Gull wing

Voltage - Rated DC :

50V

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Halogen Free :

Halogen Free

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Transistor Type :

NPN - Pre-Biased

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Terminal Position :

Dual

ECCN Code :

EAR99

Number of Pins :

3

Polarity :

NPN

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Max Operating Temperature :

150°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Min Operating Temperature :

-55°C

Factory Lead Time :

4 Weeks

Resistor - Base (R1) :

22 k Ω

Transistor Application :

SWITCHING

Base Part Number :

MUN52**T

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Max Collector Current :

100mA

JESD-609 Code :

e3

Power Dissipation :

310mW

Packaging :

Tape and Reel (TR)

Published :

2006

Pbfree Code :

yes

Continuous Collector Current :

100mA

Package / Case :

SC-70, SOT-323

Current Rating :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

202mW

Number of Terminations :

3

Mounting Type :

Surface Mount

hFE Min :

60

Max Breakdown Voltage :

50V