MUN5212DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

60

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Operating Temperature :

150°C

Polarity :

NPN

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Max Breakdown Voltage :

50V

JESD-609 Code :

e3

Power Dissipation :

187mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Max Power Dissipation :

250mW

Lead Free :

Lead Free

Published :

2005

Resistor - Base (R1) :

22k Ω

Element Configuration :

Dual

Continuous Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Factory Lead Time :

8 Weeks

Package / Case :

6-TSSOP, SC-88, SOT-363

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Resistor - Emitter Base (R2) :

22k Ω

Current - Collector Cutoff (Max) :

500nA

Contact Plating :

Tin

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Min Operating Temperature :

-55°C

Surface Mount :

yes

Current Rating :

100mA

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Base Part Number :

MUN52**DW1T

Radiation Hardening :

No

Number of Elements :

2

Voltage - Rated DC :

50V

Max Collector Current :

100mA

Terminal Form :

Gull wing

ECCN Code :

EAR99