MUN5211T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

10 k Ω

Current - Collector Cutoff (Max) :

500nA

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Terminal Form :

Gull wing

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

hFE Min :

35

Terminal Position :

Dual

Contact Plating :

Tin

Power Dissipation :

310mW

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

50V

Continuous Collector Current :

100mA

Published :

2006

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Package / Case :

SC-70, SOT-323

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Max Breakdown Voltage :

50V

Transistor Type :

NPN - Pre-Biased

Min Operating Temperature :

-55°C

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time :

5 Weeks

Number of Terminations :

3

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Element Configuration :

Single

Base Part Number :

MUN52**T

Number of Elements :

1

Current Rating :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

10 k Ω

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Pins :

3

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

202mW

Max Collector Current :

100mA

Pbfree Code :

yes

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

3

REACH SVHC :

No SVHC