MUN5137DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Number of Terminations :

6

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Max Collector Current :

100mA

Surface Mount :

yes

Transistor Type :

2 PNP - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

PNP

hFE Min :

80

Max Power Dissipation :

250mW

Mounting Type :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.15

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

6

Continuous Collector Current :

-100mA

Power Dissipation :

250mW

Factory Lead Time :

10 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Max Operating Temperature :

150°C

Element Configuration :

Dual

Package / Case :

6-TSSOP, SC-88, SOT-363

Base Part Number :

MUN51**DW1T

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Terminal Form :

Gull wing

Resistor - Base (R1) :

47k Ω

Current Rating :

-100mA

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Published :

2012

Number of Elements :

2

Voltage - Rated DC :

-50V

ECCN Code :

EAR99

Pbfree Code :

yes

Number of Pins :

6

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Min Operating Temperature :

-55°C

RoHS Status :

RoHS Compliant

Resistor - Emitter Base (R2) :

22k Ω