MUN5133DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.12

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

4.7k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-50V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

Continuous Collector Current :

-100mA

Published :

2009

Power Dissipation :

250mW

hFE Min :

80

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Collector Current :

100mA

Max Power Dissipation :

250mW

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Factory Lead Time :

2 Weeks

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

6

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Current Rating :

-100mA

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Resistor - Emitter Base (R2) :

47k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Surface Mount :

yes

Element Configuration :

Dual

Base Part Number :

MUN51**DW1T

Polarity :

PNP

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Number of Pins :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Pbfree Code :

yes