MUN5131DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Polarity :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Published :

2009

Pbfree Code :

yes

Power Dissipation :

250mW

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Continuous Collector Current :

-100mA

Factory Lead Time :

2 Weeks

Resistor - Emitter Base (R2) :

2.2k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e3

Resistor - Base (R1) :

2.2k Ω

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-55°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Operating Temperature :

150°C

Element Configuration :

Dual

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Max Power Dissipation :

250mW

Current Rating :

-100mA

hFE Min :

8

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Max Collector Current :

100mA

Number of Elements :

2

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

2 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

500nA

Number of Pins :

6

Base Part Number :

MUN51**DW1T

Halogen Free :

Halogen Free

Voltage - Rated DC :

-50V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)