MUN2230T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

NPN - Pre-Biased

Max Operating Temperature :

150°C

Voltage - Rated DC :

50V

Peak Reflow Temperature (Cel) :

260

Max Output Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Resistor - Base (R1) :

1 k Ω

Operating Supply Voltage :

50V

Max Power Dissipation :

338mW

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Published :

2009

Resistor - Emitter Base (R2) :

1 k Ω

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Polarity :

NPN

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Surface Mount :

yes

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Transistor Application :

SWITCHING

Current Rating :

100mA

Power Dissipation :

230mW

Pbfree Code :

yes

Min Operating Temperature :

-55°C

Continuous Collector Current :

100mA

Factory Lead Time :

2 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Terminal Position :

Dual

Terminal Form :

Gull wing

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3