MUN2113T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Mounting Type :

Surface Mount

Pin Count :

3

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

Operating Supply Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Output Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Length :

2.9mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Max Operating Temperature :

150°C

Current Rating :

-100mA

Pbfree Code :

yes

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

47 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

47 k Ω

Power Dissipation :

338mW

Max Collector Current :

100mA

Base Part Number :

MUN2113

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

250mV

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Packaging :

Tape and Reel (TR)

Number of Elements :

1

ECCN Code :

EAR99

Terminal Form :

Gull wing

JESD-609 Code :

e3

Voltage - Rated DC :

-50V

Lead Free :

Lead Free

Transistor Type :

PNP - Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Published :

2006

Height :

1.09mm

Collector Emitter Voltage (VCEO) :

50V

Width :

1.5mm

Number of Pins :

3

Polarity :

PNP

Continuous Collector Current :

100mA

Max Power Dissipation :

230mW

Factory Lead Time :

8 Weeks

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

hFE Min :

80