MUN2114T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Collector Current :

100mA

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Published :

2006

Power Dissipation :

338mW

Terminal Position :

Dual

Polarity :

PNP

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Voltage - Rated DC :

-50V

Resistor - Emitter Base (R2) :

47 k Ω

Pin Count :

3

Max Output Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Current Rating :

-100mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Transistor Type :

PNP - Pre-Biased

Radiation Hardening :

No

hFE Min :

80

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Surface Mount :

yes

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Operating Supply Voltage :

50V

Max Power Dissipation :

230mW

Lead Free :

Lead Free

Element Configuration :

Single

Halogen Free :

Halogen Free

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Elements :

1

Continuous Collector Current :

100mA

Resistor - Base (R1) :

10 k Ω