MUN2114T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Resistor - Base (R1) :

10 k Ω

Resistor - Emitter Base (R2) :

47 k Ω

Terminal Position :

Dual

Mounting Type :

Surface Mount

Transistor Type :

PNP - Pre-Biased

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

hFE Min :

80

Operating Supply Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

3

Voltage - Rated DC :

-50V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Max Power Dissipation :

230mW

Max Collector Current :

100mA

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Continuous Collector Current :

100mA

Surface Mount :

yes

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

338mW

Lead Free :

Lead Free

Max Output Current :

100mA

Current Rating :

-100mA

Factory Lead Time :

8 Weeks

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Number of Pins :

3

JESD-609 Code :

e3

Polarity :

PNP

Published :

2006

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Peak Reflow Temperature (Cel) :

260