MUN2114T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Power Dissipation :

338mW

Number of Elements :

1

Terminal Position :

Dual

Polarity :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

230mW

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Continuous Collector Current :

100mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Max Collector Current :

100mA

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

47 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Current Rating :

-100mA

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Operating Supply Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Terminal Form :

Gull wing

Published :

2006

Max Output Current :

100mA

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Element Configuration :

Single

hFE Min :

80

Number of Terminations :

3

Voltage - Rated DC :

-50V

Halogen Free :

Halogen Free

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

PNP - Pre-Biased

JESD-609 Code :

e3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Resistor - Base (R1) :

10 k Ω

Number of Pins :

3