MUN2112T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Element Configuration :

Single

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Surface Mount :

yes

Transistor Type :

PNP - Pre-Biased

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Max Power Dissipation :

230mW

Continuous Collector Current :

100mA

Pbfree Code :

yes

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

50V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Published :

2006

Polarity :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Min Operating Temperature :

-55°C

Pin Count :

3

Radiation Hardening :

No

Current Rating :

-100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Voltage - Rated DC :

-50V

Base Part Number :

MUN2112

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

hFE Min :

60

Number of Elements :

1

Number of Pins :

3

Resistor - Emitter Base (R2) :

22 k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Resistor - Base (R1) :

22 k Ω

Halogen Free :

Halogen Free

Power Dissipation :

338mW

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

500nA

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260