MUN2112T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Collector Current :

100mA

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

50V

Polarity :

PNP

Terminal Position :

Dual

Lead Free :

Lead Free

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Min Operating Temperature :

-55°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Number of Pins :

3

Published :

2006

Power Dissipation :

338mW

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Number of Terminations :

3

Radiation Hardening :

No

Voltage - Rated DC :

-50V

Base Part Number :

MUN2112

hFE Min :

60

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Current Rating :

-100mA

Element Configuration :

Single

Transistor Type :

PNP - Pre-Biased

Max Power Dissipation :

230mW

Current - Collector Cutoff (Max) :

500nA

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

22 k Ω

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Resistor - Base (R1) :

22 k Ω

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Continuous Collector Current :

100mA

Mounting Type :

Surface Mount

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)