MUN2112T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

JESD-609 Code :

e3

Continuous Collector Current :

100mA

Max Operating Temperature :

150°C

Number of Pins :

3

Transistor Type :

PNP - Pre-Biased

Element Configuration :

Single

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Halogen Free :

Halogen Free

Terminal Form :

Gull wing

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

hFE Min :

60

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

22 k Ω

Resistor - Emitter Base (R2) :

22 k Ω

Number of Terminations :

3

Polarity :

PNP

Max Breakdown Voltage :

50V

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Base Part Number :

MUN2112

Number of Elements :

1

Lead Free :

Lead Free

Voltage - Rated DC :

-50V

Power Dissipation :

338mW

Published :

2006

Max Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Pin Count :

3

Max Power Dissipation :

230mW

Terminal Finish :

Tin (Sn)

Current Rating :

-100mA

ECCN Code :

EAR99