MUN2211T1G
- Mfr.Part #
- MUN2211T1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V 100MA SC59
- Stock
- 4,982
- In Stock :
- 4,982
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Transistor Application :
- SWITCHING
- Width :
- 1.5mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 230mW
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 2.9mm
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Height :
- 1.09mm
- hFE Min :
- 35
- Base Part Number :
- MUN2211
- Max Operating Temperature :
- 150°C
- Max Output Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 250mV
- Resistor - Base (R1) :
- 10 k Ω
- Current - Collector Cutoff (Max) :
- 500nA
- Collector Emitter Breakdown Voltage :
- 50V
- Surface Mount :
- yes
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 50V
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 35 @ 5mA 10V
- Continuous Collector Current :
- 100mA
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 50V
- Current Rating :
- 100mA
- Halogen Free :
- Halogen Free
- REACH SVHC :
- No SVHC
- Polarity :
- NPN
- Factory Lead Time :
- 8 Weeks
- Operating Supply Voltage :
- 50V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Published :
- 2003
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN - Pre-Biased
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 230mW
- Datasheets
- MUN2211T1G

MUN2211T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
MUN2211T1G Description
The MUN2211T1G from ON Semiconductor is an NPN Bipolar Digital Transistor (BRT) with a single transistor and a monolithic bias network consisting of two resistors.
MUN2211T1G Features
-
Simplifies Circuit Design
-
Reduces Board Space
-
Reduces Component Count
-
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
MUN2211T1G Applications
-
Automotive
-
Power Management
-
Industrial
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