MUN2211T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V

Max Output Current :

100mA

Published :

2003

hFE Min :

35

Current Rating :

100mA

Length :

2.9mm

Max Power Dissipation :

230mW

Voltage - Rated DC :

50V

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector Cutoff (Max) :

500nA

Polarity :

NPN

Factory Lead Time :

8 Weeks

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Width :

1.5mm

Terminal Form :

Gull wing

Operating Supply Voltage :

50V

Radiation Hardening :

No

Max Collector Current :

100mA

Lead Free :

Lead Free

Resistor - Base (R1) :

10 k Ω

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Number of Terminations :

3

Height :

1.09mm

Halogen Free :

Halogen Free

Max Operating Temperature :

150°C

Collector Emitter Saturation Voltage :

250mV

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Power Dissipation :

230mW

Continuous Collector Current :

100mA

Number of Elements :

1

Base Part Number :

MUN2211

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Pins :

3

Pbfree Code :

yes

ECCN Code :

EAR99

Transistor Type :

NPN - Pre-Biased

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V