MT3S113TU,LF

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Mfr.Part #
MT3S113TU,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
3-SMD, Flat Lead
Datasheet
Download
Description
RF TRANS NPN 5.3V 11.2GHZ UFM
Stock
2,540
In Stock :
2,540

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - RF
Transistor Type :
NPN
Noise Figure (dB Typ @ f) :
1.45dB @ 1GHz
Voltage - Collector Emitter Breakdown (Max) :
5.3V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
12 Weeks
Power - Max :
900mW
Operating Temperature :
150°C TJ
Current - Collector (Ic) (Max) :
100mA
Gain :
12.5dB
Packaging :
Tape and Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA 5V
Mounting Type :
Surface Mount
Package / Case :
3-SMD, Flat Lead
Frequency - Transition :
11.2GHz
RoHS Status :
RoHS Compliant
Datasheets
MT3S113TU,LF
Introducing Transistors - Bipolar (BJT) - RF Toshiba Electronic Devices and Storage Corporation MT3S113TU,LF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Gain:12.5dB, Mounting Type:Surface Mount, Package / Case:3-SMD, Flat Lead, MT3S113TU,LF pinout, MT3S113TU,LF datasheet PDF, MT3S113TU,LF amp .Beyond Transistors - Bipolar (BJT) - RF Toshiba Electronic Devices and Storage Corporation MT3S113TU,LF ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation MT3S113TU,LF


MT3S113TU,LF datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Toshiba Semiconductor and Storage stock available at

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