MT3S111TU,LF

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Mfr.Part #
MT3S111TU,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
3-SMD, Flat Lead
Datasheet
Download
Description
RF SIGE NPN BIPOLAR TRANSISTOR N
Stock
3,000
In Stock :
3,000

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - RF
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA 5V
Operating Temperature :
150°C TJ
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Factory Lead Time :
12 Weeks
Current - Collector (Ic) (Max) :
100mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
RoHS Compliant
Power - Max :
800mW
Noise Figure (dB Typ @ f) :
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain :
12.5dB
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
3-SMD, Flat Lead
Voltage - Collector Emitter Breakdown (Max) :
6V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
10GHz
Transistor Type :
NPN
Datasheets
MT3S111TU,LF
Introducing Transistors - Bipolar (BJT) - RF Toshiba Electronic Devices and Storage Corporation MT3S111TU,LF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Gain:12.5dB, Package / Case:3-SMD, Flat Lead, MT3S111TU,LF pinout, MT3S111TU,LF datasheet PDF, MT3S111TU,LF amp .Beyond Transistors - Bipolar (BJT) - RF Toshiba Electronic Devices and Storage Corporation MT3S111TU,LF ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation MT3S111TU,LF


MT3S111TU,LF datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Toshiba Semiconductor and Storage stock available at

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