MPSW63

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Mfr.Part #
MPSW63
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A TO92
Stock
46,140
In Stock :
46,140

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
30V
Max Power Dissipation :
1W
Time@Peak Reflow Temperature-Max (s) :
30
Packaging :
Bulk
Lead Free :
Contains Lead
Pbfree Code :
No
Number of Pins :
3
Number of Terminations :
3
RoHS Status :
Non-RoHS Compliant
Qualification Status :
Not Qualified
Lifecycle Status :
OBSOLETE (Last Updated: 1 week ago)
Number of Elements :
1
Mounting Type :
Through Hole
Transistor Type :
PNP - Darlington
Package / Case :
TO-226-3, TO-92-3 Long Body
Terminal Finish :
Tin/Lead (Sn/Pb)
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Terminal Position :
BOTTOM
Emitter Base Voltage (VEBO) :
10V
Collector Emitter Saturation Voltage :
1.5V
Base Part Number :
MPSW63
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Continuous Collector Current :
-500mA
JESD-609 Code :
e0
Max Collector Current :
500mA
Operating Temperature :
-55°C~150°C TJ
Current Rating :
-500mA
Current - Collector Cutoff (Max) :
100nA ICBO
Voltage - Rated DC :
-30V
Frequency - Transition :
125MHz
Published :
2006
Polarity :
PNP
Reach Compliance Code :
not_compliant
Power Dissipation :
1W
Transistor Element Material :
SILICON
Transition Frequency :
125MHz
Collector Emitter Breakdown Voltage :
30V
Mount :
Through Hole
Collector Base Voltage (VCBO) :
30V
Peak Reflow Temperature (Cel) :
240
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Element Configuration :
Single
Datasheets
MPSW63
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW63 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 Long Body, Base Part Number:MPSW63, Operating Temperature:-55°C~150°C TJ, MPSW63 pinout, MPSW63 datasheet PDF, MPSW63 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW63 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW63


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW63 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 500mA volts.

MPSW63 Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz


MPSW63 Applications


There are a lot of ON Semiconductor
MPSW63 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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