MPS3563RLRAG

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Mfr.Part #
MPS3563RLRAG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Stock
6,000
In Stock :
6,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
12 V
Collector Emitter Saturation Voltage :
400 mV
Frequency - Transition :
600MHz
Power - Max :
350 mW
Collector-Emitter Voltage-Max :
12 V
Base Product Number :
MPS356
Max Collector Current :
50 mA
Reach Compliance Code :
Unknown
Collector Base Voltage (VCBO) :
30 V
Number of Terminals :
3
JESD-609 Code :
e1
Package :
Bulk
Max Power Dissipation :
350 mW
JEDEC-95 Code :
TO-92
Supplier Device Package :
TO-92 (TO-226)
Operating Temperature :
-55°C ~ 150°C (TJ)
Transistor Element Material :
SILICON
Terminal Finish :
TIN SILVER COPPER
Min Operating Temperature :
-55 °C
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Through Hole
Gain Bandwidth Product :
1.5 GHz
RoHS :
Compliant
Manufacturer :
Rochester Electronics LLC
Polarity :
NPN
Surface Mount :
No
Polarity/Channel Type :
NPN
Package / Case :
TO-226-3, TO-92-3 Long Body
Qualification Status :
COMMERCIAL
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 8mA, 10V
Manufacturer Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Highest Frequency Band :
ULTRA HIGH FREQUENCY BAND
Pbfree Code :
yes
Package Shape :
Round
Number of Elements :
1
Terminal Form :
THROUGH-HOLE
Number of Pins :
3
Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Current - Collector Cutoff (Max) :
10nA (ICBO)
Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
-
Pin Count :
3
Max Operating Temperature :
150 °C
Collector-Base Capacitance-Max :
1.7 pF
Transistor Application :
AMPLIFIER
Product Status :
Active
Current - Collector (Ic) (Max) :
50 mA
Transistor Type :
NPN
Element Configuration :
Single
Series :
-
Emitter Base Voltage (VEBO) :
2 V
Voltage - Collector Emitter Breakdown (Max) :
12 V
JESD-30 Code :
O-PBCY-T3
Collector Current-Max (IC) :
0.05 A
Lead Free :
Lead Free
Terminal Position :
BOTTOM
hFE Min :
20
Datasheets
MPS3563RLRAG
Introducing Transistors - Bipolar (BJT) - Single onsemi MPS3563RLRAG from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 Long Body, Number of Pins:3, MPS3563RLRAG pinout, MPS3563RLRAG datasheet PDF, MPS3563RLRAG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPS3563RLRAG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPS3563RLRAG


NPN -55°C ~ 150°C (TJ) 10nA (ICBO) 1 Elements SILICON NPN TO-226-3, TO-92-3 Long Body Through Hole

MPS3563RLRAG Overview


DC current gain in this device equals 20 @ 8mA, 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400 mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is -.An emitter's base voltage can be kept at 2 V to gain high efficiency.Product comes in TO-92 (TO-226) supplier package.Maximal collector-emitter voltage can be set at 12 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 50 mA volts.

MPS3563RLRAG Features


the DC current gain for this device is 20 @ 8mA, 10V
a collector emitter saturation voltage of 400 mV
the vce saturation(Max) is -
the emitter base voltage is kept at 2 V
the supplier device package of TO-92 (TO-226)


MPS3563RLRAG Applications


There are a lot of onsemi
MPS3563RLRAG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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