MPS3646G
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- Mfr.Part #
- MPS3646G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.3A TO92
- Stock
- 20,837
- In Stock ：
- 20,837
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- hFE Min :
- 30
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 400mV
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Transition Frequency :
- 350MHz
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 15V
- Max Collector Current :
- 300mA
- Voltage - Rated DC :
- 15V
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn Off Time-Max (toff) :
- 28ns
- Element Configuration :
- Single
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 30mA, 300mA
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Base Part Number :
- MPS3646
- Gain Bandwidth Product :
- 350MHz
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Base Voltage (VCBO) :
- 40V
- Current - Collector Cutoff (Max) :
- 500nA
- Published :
- 2006
- Collector Emitter Voltage (VCEO) :
- 15V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500mV
- Frequency :
- 350MHz
- Current Rating :
- 300mA
- Max Power Dissipation :
- 625mW
- Datasheets
- MPS3646G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS3646G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 30mA 400mV.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 30mA, 300mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 300mA.A transition frequency of 350MHz is present in the part.Collector current can be as low as 300mA volts at its maximum.
MPS3646G Features
the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz
MPS3646G Applications
There are a lot of ON Semiconductor
MPS3646G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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