MPS3646
- Mfr.Part #
- MPS3646
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.3A TO92
- Stock
- 46,682
- In Stock :
- 46,682
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn On Time-Max (ton) :
- 18ns
- Turn Off Time-Max (toff) :
- 28ns
- Reach Compliance Code :
- not_compliant
- Published :
- 2006
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 30mA, 300mA
- JESD-609 Code :
- e0
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 300mA
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 500mV
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Breakdown Voltage :
- 15V
- Collector Base Voltage (VCBO) :
- 40V
- Transition Frequency :
- 350MHz
- Mounting Type :
- Through Hole
- Max Collector Current :
- 300mA
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 400mV
- hFE Min :
- 30
- Number of Pins :
- 3
- REACH SVHC :
- Unknown
- Collector Emitter Saturation Voltage :
- 500mV
- Base Part Number :
- MPS3646
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 350MHz
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Voltage - Rated DC :
- 15V
- HTS Code :
- 8541.21.00.75
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 500nA
- Peak Reflow Temperature (Cel) :
- 240
- Element Configuration :
- Single
- Lead Free :
- Contains Lead
- Datasheets
- MPS3646
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS3646 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 30mA 400mV.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 30mA, 300mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 350MHz.During maximum operation, collector current can be as low as 300mA volts.
MPS3646 Features
the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz
MPS3646 Applications
There are a lot of ON Semiconductor
MPS3646 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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