MPS3563G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Collector Emitter Breakdown Voltage :

12V

Number of Elements :

1

Qualification Status :

Not Qualified

Collector Emitter Voltage (VCEO) :

12V

Voltage - Rated DC :

12V

Terminal Position :

BOTTOM

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Lifecycle Status :

OBSOLETE (Last Updated: 1 day ago)

Peak Reflow Temperature (Cel) :

260

Noise Figure (dB Typ @ f) :

6.5dB @ 60MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Pbfree Code :

yes

Packaging :

Bulk

Max Power Dissipation :

350W

Max Collector Current :

50mA

Element Configuration :

Single

Power Dissipation :

850mW

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Collector-Base Capacitance-Max :

1.7pF

HTS Code :

8541.21.00.75

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Pin Count :

3

Gain :

14dB @ 200MHz

Transition Frequency :

1500MHz

Collector Emitter Saturation Voltage :

400mV

Collector Base Voltage (VCBO) :

30V

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA 10V

Mount :

Through Hole

Current Rating :

50mA

Number of Pins :

3

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

2V

Gain Bandwidth Product :

1.5 GHz

Number of Terminations :

3

hFE Min :

20

Published :

2006