MPS3563RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

No

Configuration :

Single

Operating Temperature :

-55°C ~ 150°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA, 10V

Polarity/Channel Type :

NPN

JESD-609 Code :

e1

Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

400 mV

Terminal Finish :

TIN SILVER COPPER

Voltage - Collector Emitter Breakdown (Max) :

12 V

Collector Current-Max (IC) :

0.05 A

Max Power Dissipation :

350 mW

Power - Max :

350 mW

Element Configuration :

Single

Frequency - Transition :

600MHz

Product Status :

Active

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

Transistor Type :

NPN

Min Operating Temperature :

-55 °C

Number of Elements :

1

Base Product Number :

MPS356

Package Shape :

Round

Pbfree Code :

yes

Manufacturer Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Max Operating Temperature :

150 °C

Series :

-

Number of Terminals :

3

Polarity :

NPN

Supplier Device Package :

TO-92 (TO-226)

Package :

Bulk

Collector Base Voltage (VCBO) :

30 V

Terminal Form :

THROUGH-HOLE

hFE Min :

20

Current - Collector Cutoff (Max) :

10nA (ICBO)

JESD-30 Code :

O-PBCY-T3

Package / Case :

TO-226-3, TO-92-3 Long Body

Number of Pins :

3

Transistor Element Material :

SILICON

Collector-Emitter Voltage-Max :

12 V

Manufacturer :

Rochester Electronics LLC

Collector-Base Capacitance-Max :

1.7 pF

Vce Saturation (Max) @ Ib, Ic :

-

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Pin Count :

3

Max Collector Current :

50 mA

Qualification Status :

COMMERCIAL

Current - Collector (Ic) (Max) :

50 mA

Gain Bandwidth Product :

1.5 GHz

Emitter Base Voltage (VEBO) :

2 V

JEDEC-95 Code :

TO-92

Collector Emitter Voltage (VCEO) :

12 V

RoHS :

Compliant

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Reach Compliance Code :

Unknown