MPS3646RLRAG
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- Mfr.Part #
- MPS3646RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.3A TO92
- Stock
- 36,018
- In Stock ：
- 36,018
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 300mA
- HTS Code :
- 8541.21.00.75
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 15V
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 500nA
- Turn On Time-Max (ton) :
- 18ns
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 400mV
- Base Part Number :
- MPS3646
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 40V
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 500mV
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 350MHz
- hFE Min :
- 30
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 30mA, 300mA
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- Turn Off Time-Max (toff) :
- 28ns
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- Current Rating :
- 300mA
- Gain Bandwidth Product :
- 350MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 15V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Max Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MPS3646RLRAG
NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS3646RLRAG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 30mA 400mV.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 30mA, 300mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 300mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 350MHz.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
MPS3646RLRAG Features
the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz
MPS3646RLRAG Applications
There are a lot of ON Semiconductor
MPS3646RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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