MMIX1T550N055T2

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Mfr.Part #
MMIX1T550N055T2
Manufacturer
Littelfuse
Package / Case
24-PowerSMD, 21 Leads
Datasheet
Download
Description
MOSFET N-CH 55V 550A 24SMPD
Stock
20
In Stock :
20

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
2000A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Series :
FRFET®, SupreMOS®
Mounting Style :
SMD/SMT
Drain Current-Max (Abs) (ID) :
550 A
Number of Channels :
1 Channel
Gate to Source Voltage (Vgs) :
20V
Length :
25.25mm
Factory Lead Time :
28 Weeks
Drain-source On Resistance-Max :
0.0013Ohm
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
3.8V @ 250μA
Rds On (Max) @ Id, Vgs :
1.3m Ω @ 100A, 10V
Polarity/Channel Type :
N-Channel
Channel Type :
N
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
Vgs (Max) :
±20V
Tradename :
HiPerFET
Maximum Operating Temperature :
+175 °C
Configuration :
Single
Power Dissipation-Max (Abs) :
830 W
Transistor Polarity :
N-Channel
Width :
23.25mm
FET Type :
N-Channel
Surface Mount :
yes
Avalanche Energy Rating (Eas) :
3000 mJ
Current - Continuous Drain (Id) @ 25°C :
550A Tc
RoHS Status :
ROHS3 Compliant
Channel Mode :
Enhancement
Package Shape :
RECTANGULAR
Height :
5.7mm
Transistor Application :
SWITCHING
Product Status :
Active
Base Product Number :
MMIX1T550
DS Breakdown Voltage-Min :
55V
Product Type :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
40000pF @ 25V
Mounting Type :
Surface Mount
Turn On Delay Time :
45 ns
Drain to Source Voltage (Vdss) :
55V
Number of Elements per Chip :
1
Power Dissipation-Max :
830W Tc
Element Configuration :
Single
Package / Case :
24-PowerSMD, 21 Leads
Power Dissipation (Max) :
830W (Tc)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
40 ns
Mount :
Surface Mount
Packaging :
Tube
Brand :
IXYS
Turn-Off Delay Time :
90 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
21
Supplier Device Package :
24-SMPD
Transistor Element Material :
SILICON
Number of Pins :
24
RoHS :
Details
Terminal Form :
Gull wing
Product Category :
MOSFET
Package Type :
SMPD
Continuous Drain Current (ID) :
550A
Operating Mode :
ENHANCEMENT MODE
Case Connection :
Isolated
Gate Charge (Qg) (Max) @ Vgs :
595nC @ 10V
Minimum Operating Temperature :
-55 °C
Number of Terminations :
21
ECCN Code :
EAR99
JESD-30 Code :
R-PDSO-G21
Additional Feature :
AVALANCHE RATED
Package :
Tube
Type :
TrenchT2 GigaMOS Power MOSFET
Terminal Position :
Dual
FET Feature :
--
Published :
2010
Number of Terminals :
21
Datasheets
MMIX1T550N055T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse MMIX1T550N055T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:24-PowerSMD, 21 Leads, Number of Pins:24, Number of Terminations:21, Type:TrenchT2 GigaMOS Power MOSFET, MMIX1T550N055T2 pinout, MMIX1T550N055T2 datasheet PDF, MMIX1T550N055T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse MMIX1T550N055T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 1.3m Ω @ 100A, 10V ±20V 40000pF @ 25V 595nC @ 10V 55V 24-PowerSMD, 21 Leads

MMIX1T550N055T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 40000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 550 A.As a result of its turn-off delay time, which is 90 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 2000A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 45 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

MMIX1T550N055T2 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 550A
the turn-off delay time is 90 ns
based on its rated peak drain current 2000A.
a 55V drain to source voltage (Vdss)


MMIX1T550N055T2 Applications


There are a lot of IXYS
MMIX1T550N055T2 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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