MMIX1T550N055T2
- Mfr.Part #
- MMIX1T550N055T2
- Manufacturer
- Littelfuse
- Package / Case
- 24-PowerSMD, 21 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 550A 24SMPD
- Stock
- 20
- In Stock :
- 20
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 2000A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- Series :
- FRFET®, SupreMOS®
- Mounting Style :
- SMD/SMT
- Drain Current-Max (Abs) (ID) :
- 550 A
- Number of Channels :
- 1 Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 25.25mm
- Factory Lead Time :
- 28 Weeks
- Drain-source On Resistance-Max :
- 0.0013Ohm
- Reach Compliance Code :
- Compliant
- Vgs(th) (Max) @ Id :
- 3.8V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 1.3m Ω @ 100A, 10V
- Polarity/Channel Type :
- N-Channel
- Channel Type :
- N
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Tradename :
- HiPerFET
- Maximum Operating Temperature :
- +175 °C
- Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 830 W
- Transistor Polarity :
- N-Channel
- Width :
- 23.25mm
- FET Type :
- N-Channel
- Surface Mount :
- yes
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 550A Tc
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Package Shape :
- RECTANGULAR
- Height :
- 5.7mm
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- Base Product Number :
- MMIX1T550
- DS Breakdown Voltage-Min :
- 55V
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 40000pF @ 25V
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 45 ns
- Drain to Source Voltage (Vdss) :
- 55V
- Number of Elements per Chip :
- 1
- Power Dissipation-Max :
- 830W Tc
- Element Configuration :
- Single
- Package / Case :
- 24-PowerSMD, 21 Leads
- Power Dissipation (Max) :
- 830W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 40 ns
- Mount :
- Surface Mount
- Packaging :
- Tube
- Brand :
- IXYS
- Turn-Off Delay Time :
- 90 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 21
- Supplier Device Package :
- 24-SMPD
- Transistor Element Material :
- SILICON
- Number of Pins :
- 24
- RoHS :
- Details
- Terminal Form :
- Gull wing
- Product Category :
- MOSFET
- Package Type :
- SMPD
- Continuous Drain Current (ID) :
- 550A
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 595nC @ 10V
- Minimum Operating Temperature :
- -55 °C
- Number of Terminations :
- 21
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-G21
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Type :
- TrenchT2 GigaMOS Power MOSFET
- Terminal Position :
- Dual
- FET Feature :
- --
- Published :
- 2010
- Number of Terminals :
- 21
- Datasheets
- MMIX1T550N055T2
N-Channel Tube 1.3m Ω @ 100A, 10V ±20V 40000pF @ 25V 595nC @ 10V 55V 24-PowerSMD, 21 Leads
MMIX1T550N055T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 40000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 550 A.As a result of its turn-off delay time, which is 90 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 2000A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 45 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
MMIX1T550N055T2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 550A
the turn-off delay time is 90 ns
based on its rated peak drain current 2000A.
a 55V drain to source voltage (Vdss)
MMIX1T550N055T2 Applications
There are a lot of IXYS
MMIX1T550N055T2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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