MMIX1F360N15T2
- Mfr.Part #
- MMIX1F360N15T2
- Manufacturer
- Littelfuse
- Package / Case
- 24-PowerSMD, 21 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 235A 24SMPD
- Stock
- 17,321
- In Stock :
- 17,321
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 680W (Tc)
- Number of Terminals :
- 21
- Rds On (Max) @ Id, Vgs :
- 4.4m Ω @ 100A, 10V
- RoHS Status :
- ROHS3 Compliant
- Channel Mode :
- Enhancement
- Terminal Form :
- Gull wing
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Surface Mount :
- yes
- Manufacturer :
- IXYS
- Turn-Off Delay Time :
- 115 ns
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 25.25mm
- Transistor Application :
- SWITCHING
- Height :
- 5.7mm
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Terminal Position :
- Dual
- Product Status :
- Active
- Operating Temperature :
- -55°C~175°C TJ
- Package Shape :
- RECTANGULAR
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Mounting Style :
- SMD/SMT
- Input Capacitance (Ciss) (Max) @ Vds :
- 47500pF @ 25V
- Rise Time :
- 170 ns
- Power Dissipation-Max :
- 680W Tc
- Product Category :
- MOSFET
- Number of Pins :
- 24
- JESD-30 Code :
- R-PDSO-G21
- Maximum Operating Temperature :
- + 175 C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Series :
- GigaMOS™, TrenchT2™
- Brand :
- IXYS
- Published :
- 2012
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 900A
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 150V
- Current - Continuous Drain (Id) @ 25°C :
- 235A Tc
- Product Type :
- MOSFET
- Package / Case :
- 24-PowerSMD, 21 Leads
- Base Product Number :
- MMIX1F360
- Minimum Operating Temperature :
- - 55 C
- Width :
- 23.25mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Type :
- TrenchT2 GigaMOS HiperFET Power MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Pin Count :
- 21
- DS Breakdown Voltage-Min :
- 150V
- Turn On Delay Time :
- 50 ns
- Tradename :
- HiPerFET
- Gate Charge (Qg) (Max) @ Vgs :
- 715nC @ 10V
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 235A
- Reach Compliance Code :
- Unknown
- Supplier Device Package :
- 24-SMPD
- RoHS :
- Details
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 30 Weeks
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Power Dissipation-Max (Abs) :
- 680 W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 235 A
- Number of Terminations :
- 21
- Case Connection :
- Isolated
- Datasheets
- MMIX1F360N15T2

N-Channel Tube 4.4m Ω @ 100A, 10V ±20V 47500pF @ 25V 715nC @ 10V 150V 24-PowerSMD, 21 Leads
MMIX1F360N15T2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 47500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 235A.As shown in the table below, the drain current of this device is 235 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 115 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 900A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 50 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 150V.The drain-to-source voltage (Vdss) of this transistor needs to be at 150V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
MMIX1F360N15T2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 235A
the turn-off delay time is 115 ns
based on its rated peak drain current 900A.
a 150V drain to source voltage (Vdss)
MMIX1F360N15T2 Applications
There are a lot of IXYS
MMIX1F360N15T2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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