MMIX1F230N20T

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Mfr.Part #
MMIX1F230N20T
Manufacturer
Littelfuse
Package / Case
24-PowerSMD, 21 Leads
Datasheet
Download
Description
MOSFET N-CH 200V 168A 24SMPD
Stock
20
In Stock :
20

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Package Shape :
RECTANGULAR
Mount :
Surface Mount
Pulsed Drain Current-Max (IDM) :
630A
Terminal Position :
Dual
Mounting Style :
SMD/SMT
FET Feature :
--
Package :
Tube
Brand :
IXYS
Turn-Off Delay Time :
62 ns
DS Breakdown Voltage-Min :
200V
Turn On Delay Time :
58 ns
Operating Temperature :
-55°C~175°C TJ
Number of Pins :
24
Manufacturer :
IXYS
Number of Terminals :
21
Height :
5.7mm
Supplier Device Package :
24-SMPD
RoHS Status :
ROHS3 Compliant
Product Category :
MOSFET
Product Type :
MOSFET
Continuous Drain Current (ID) :
168A
Vgs(th) (Max) @ Id :
5V @ 8mA
Case Connection :
Isolated
Power Dissipation-Max :
600W Tc
Input Capacitance (Ciss) (Max) @ Vds :
28000pF @ 25V
Surface Mount :
yes
Terminal Form :
Gull wing
Packaging :
Tube
Package / Case :
24-PowerSMD, 21 Leads
Polarity/Channel Type :
N-Channel
Vgs (Max) :
±20V
Avalanche Energy Rating (Eas) :
3000 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2012
Current - Continuous Drain (Id) @ 25°C :
168A Tc
Additional Feature :
AVALANCHE RATED
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Length :
25.25mm
Factory Lead Time :
30 Weeks
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
378nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Number of Terminations :
21
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Pin Count :
21
JESD-30 Code :
R-PDSO-G21
Base Product Number :
MMIX1F230
RoHS :
Details
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Width :
23.25mm
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation (Max) :
600W (Tc)
ECCN Code :
EAR99
Drain-source On Resistance-Max :
0.0083Ohm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Tradename :
HiPerFET
Transistor Polarity :
N-Channel
Transistor Application :
SWITCHING
Subcategory :
MOSFETs
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
8.3m Ω @ 60A, 10V
Drain to Source Voltage (Vdss) :
200V
Datasheets
MMIX1F230N20T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F230N20T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:24, Package / Case:24-PowerSMD, 21 Leads, Number of Terminations:21, Mounting Type:Surface Mount, MMIX1F230N20T pinout, MMIX1F230N20T datasheet PDF, MMIX1F230N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F230N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 8.3m Ω @ 60A, 10V ±20V 28000pF @ 25V 378nC @ 10V 200V 24-PowerSMD, 21 Leads

MMIX1F230N20T Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 28000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 168A amps.It is [62 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 630A.A turn-on delay time of 58 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 200V to maintain normal operation.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

MMIX1F230N20T Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 168A
the turn-off delay time is 62 ns
based on its rated peak drain current 630A.
a 200V drain to source voltage (Vdss)


MMIX1F230N20T Applications


There are a lot of IXYS
MMIX1F230N20T applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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