MMIX1F420N10T
- Mfr.Part #
- MMIX1F420N10T
- Manufacturer
- Littelfuse
- Package / Case
- 24-PowerSMD, 21 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 334A 24SMPD
- Stock
- 16
- In Stock :
- 16
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 334 A
- Brand :
- IXYS
- Supplier Device Package :
- 24-SMPD
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 60A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 30 Weeks
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 100 V
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- 24-PowerSMD, 21 Leads
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time :
- 47 ns
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Configuration :
- Single
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 23.25mm
- FET Feature :
- --
- Element Configuration :
- Single
- Power Dissipation :
- 680W
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 1000 A
- Polarity/Channel Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- Product Status :
- Active
- Surface Mount :
- yes
- Manufacturer :
- IXYS
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 680 W
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Package :
- Tube
- Mounting Type :
- Surface Mount
- Number of Pins :
- 21
- Gate Charge (Qg) (Max) @ Vgs :
- 670nC @ 10V
- Package Type :
- SMPD
- RoHS :
- Details
- Power Dissipation (Max) :
- 680W (Tc)
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 0.0026Ohm
- Channel Mode :
- Enhancement
- Pin Count :
- 21
- Current - Continuous Drain (Id) @ 25°C :
- 334A Tc
- Number of Terminals :
- 21
- Number of Terminations :
- 21
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Minimum Operating Temperature :
- -55 °C
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 10V
- JESD-30 Code :
- R-PDSO-G21
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 334A
- Base Product Number :
- MMIX1F420
- Drain to Source Voltage (Vdss) :
- 100V
- Mounting Style :
- SMD/SMT
- Turn-Off Delay Time :
- 115 ns
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Published :
- 2012
- Tradename :
- HiPerFET
- Packaging :
- Tube
- Power Dissipation-Max :
- 680W Tc
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Transistor Application :
- SWITCHING
- Number of Elements per Chip :
- 1
- Maximum Operating Temperature :
- +175 °C
- Length :
- 25.25mm
- Channel Type :
- N
- Height :
- 5.7mm
- Case Connection :
- Isolated
- Datasheets
- MMIX1F420N10T

N-Channel Tube 2.6m Ω @ 60A, 10V ±20V 4700pF @ 10V 670nC @ 10V 100V 24-PowerSMD, 21 Leads
MMIX1F420N10T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 4700pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 334A, which represents the maximum continuous current it can conduct.In this device, the drain current is 334 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 115 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 1000 A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 47 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100 V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
MMIX1F420N10T Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 334A
the turn-off delay time is 115 ns
based on its rated peak drain current 1000 A.
a 100V drain to source voltage (Vdss)
MMIX1F420N10T Applications
There are a lot of IXYS
MMIX1F420N10T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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