MMIX1F520N075T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HiPerFET

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

75V

Gate to Source Voltage (Vgs) :

20V

Published :

2011

Number of Elements :

1

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

41000pF @ 25V

Mount :

Surface Mount

Base Product Number :

MMIX1F520

FET Feature :

--

Drain Current-Max (Abs) (ID) :

500 A

Length :

25.25mm

Additional Feature :

AVALANCHE RATED

MSL :

MSL 1 - Unlimited

Transistor Application :

SWITCHING

Package :

Tube

Mounting Style :

SMD/SMT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

75V

Number of Channels :

1

Radiation Hardening :

No

Lead Free :

Lead Free

Terminal Position :

Dual

Type :

Trench

DS Breakdown Voltage-Min :

75 V

Brand :

IXYS

Vgs(th) (Max) @ Id :

5V @ 8mA

Qualification :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Continuous Drain Current Id :

500A

Continuous Drain Current (ID) :

500A

Current - Continuous Drain (Id) @ 25°C :

500A Tc

Product :

Power MOSFET Modules

Number of Pins :

21

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

175°C

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

Pulsed Drain Current-Max (IDM) :

1700 A

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Factory Lead Time :

30 Weeks

Drain-source On Resistance-Max :

0.0016 Ω

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

24-SMPD

Product Category :

Discrete Semiconductor Modules

Number of Elements per Chip :

1

Channel Type :

N Channel

Terminal Form :

Gull wing

Package Type :

SMPD

Number of Terminals :

21

Surface Mount :

yes

Case Connection :

Isolated

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Turn-Off Delay Time :

80 ns

Minimum Operating Temperature :

-55 °C

Manufacturer :

IXYS

JESD-30 Code :

R-PDSO-G21

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

Discrete Semiconductor Modules

Manufacturer Package Identifier :

MMIX1F520N075T2

Channel Mode :

Enhancement

FET Type :

N-Channel

Qualification Status :

Not Qualified

Maximum Operating Temperature :

+175 °C

Power Dissipation :

830W

Power Dissipation-Max (Abs) :

830 W

ECCN Code :

EAR99

Packaging :

Tube

Package / Case :

24-PowerSMD, 21 Leads

Product Status :

Active

Series :

GigaMOS™, TrenchT2™

Power Dissipation (Max) :

830W (Tc)

Power Dissipation-Max :

830W Tc

Transistor Element Material :

SILICON

Number of Terminations :

21

Rise Time :

36 ns

Height :

5.7mm

Pin Count :

21

Width :

23.25mm

Turn On Delay Time :

48 ns

Avalanche Energy Rating (Eas) :

3000 mJ

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

545nC @ 10V

RoHS :

Details