MMIX1F180N25T

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Mfr.Part #
MMIX1F180N25T
Manufacturer
Littelfuse
Package / Case
24-PowerSMD, 21 Leads
Datasheet
Download
Description
MOSFET N-CH 250V 132A 24SMPD
Stock
20
In Stock :
20

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Published :
2010
Number of Elements :
1
JESD-30 Code :
R-PDSO-G21
Terminal Form :
Gull wing
Factory Lead Time :
30 Weeks
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13m Ω @ 90A, 10V
Drain to Source Voltage (Vdss) :
250V
Product Category :
MOSFET
Number of Terminals :
21
Power Dissipation-Max (Abs) :
570 W
Length :
25.25mm
ECCN Code :
EAR99
RoHS :
Details
Drain-source On Resistance-Max :
0.013Ohm
Number of Pins :
24
Case Connection :
Isolated
Channel Type :
N
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
24-SMPD
Gate to Source Voltage (Vgs) :
30V
Package :
Tube
Mounting Type :
Surface Mount
Channel Mode :
Enhancement
Reach Compliance Code :
Compliant
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
Package Type :
SMPD
Package Shape :
RECTANGULAR
Packaging :
Tube
Avalanche Energy Rating (Eas) :
3000 mJ
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
5V @ 8mA
Minimum Operating Temperature :
-55 °C
Current - Continuous Drain (Id) @ 25°C :
132A Tc
Tradename :
HiPerFET
Pulsed Drain Current-Max (IDM) :
500A
Surface Mount :
yes
FET Type :
N-Channel
Product Status :
Active
Additional Feature :
AVALANCHE RATED
Maximum Operating Temperature :
+150 °C
Polarity/Channel Type :
N-Channel
Transistor Polarity :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
364nC @ 10V
FET Feature :
--
Product Type :
MOSFET
Drain Current-Max (Abs) (ID) :
130A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
21
Mounting Style :
SMD/SMT
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Brand :
IXYS
Continuous Drain Current (ID) :
132A
RoHS Status :
ROHS3 Compliant
Package / Case :
24-PowerSMD, 21 Leads
Turn On Delay Time :
35 ns
Mount :
Surface Mount
Terminal Position :
Dual
Height :
5.7mm
Width :
23.25mm
Number of Elements per Chip :
1
Power Dissipation-Max :
570W Tc
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
88 ns
Base Product Number :
MMIX1F180
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
23800pF @ 25V
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Number of Terminations :
21
Power Dissipation (Max) :
570W (Tc)
DS Breakdown Voltage-Min :
250V
Datasheets
MMIX1F180N25T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F180N25T from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:24, Mounting Type:Surface Mount, Number of Channels:1 Channel, Package / Case:24-PowerSMD, 21 Leads, Operating Temperature:-55°C~150°C TJ, Number of Terminations:21, MMIX1F180N25T pinout, MMIX1F180N25T datasheet PDF, MMIX1F180N25T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse MMIX1F180N25T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 13m Ω @ 90A, 10V ±20V 23800pF @ 25V 364nC @ 10V 250V 24-PowerSMD, 21 Leads

MMIX1F180N25T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 23800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 132A.130A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 88 ns.Peak drain current for this device is 500A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 250V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.

MMIX1F180N25T Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 132A
the turn-off delay time is 88 ns
based on its rated peak drain current 500A.
a 250V drain to source voltage (Vdss)


MMIX1F180N25T Applications


There are a lot of IXYS
MMIX1F180N25T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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