MMIX1F44N100Q3
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- Mfr.Part #
- MMIX1F44N100Q3
- Manufacturer
- Littelfuse
- Package / Case
- 24-PowerSMD, 21 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 30A 24SMPD
- Stock
- 28,593
- In Stock ：
- 28,593
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Brand :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 30 Weeks
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- Supplier Device Package :
- 24-SMPD
- Power Dissipation-Max :
- 694W Tc
- Drain to Source Breakdown Voltage :
- 1kV
- Number of Elements :
- 1
- Length :
- 25.25mm
- Pin Count :
- 21
- Power Dissipation (Max) :
- 694W (Tc)
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Continuous Drain Current (ID) :
- 30A
- Power Dissipation-Max (Abs) :
- 694 W
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 1000V
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 25V
- Minimum Operating Temperature :
- - 55 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- SMD/SMT
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 264nC @ 10V
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Rise Time :
- 30ns
- Transistor Polarity :
- N-Channel
- Packaging :
- Tube
- Turn On Delay Time :
- 48 ns
- Element Configuration :
- Single
- Fall Time (Typ) :
- 28 ns
- Width :
- 23.25mm
- Height :
- 5.7mm
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Base Product Number :
- MMIX1F44
- Package / Case :
- 24-PowerSMD, 21 Leads
- Number of Terminals :
- 21
- Turn-Off Delay Time :
- 66 ns
- Product Type :
- MOSFET
- Series :
- HiPerFET™
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Details
- Number of Terminations :
- 21
- DS Breakdown Voltage-Min :
- 1000 V
- Product Status :
- Active
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Tradename :
- HiPerFET
- Reach Compliance Code :
- Compliant
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 24
- Surface Mount :
- yes
- Mount :
- Surface Mount
- Product Category :
- MOSFET
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 110A
- JESD-30 Code :
- R-PDSO-G21
- Drain-source On Resistance-Max :
- 0.245 Ω
- Terminal Form :
- Gull wing
- FET Feature :
- --
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 245m Ω @ 22A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 30 A
- Datasheets
- MMIX1F44N100Q3
N-Channel Tube 245m Ω @ 22A, 10V ±30V 13600pF @ 25V 264nC @ 10V 1000V 24-PowerSMD, 21 Leads
MMIX1F44N100Q3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 13600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.A device can conduct a maximum continuous current of [30 A] according to its drain current.It is [66 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 110A.A turn-on delay time of 48 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 1000 V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
MMIX1F44N100Q3 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 110A.
a 1000V drain to source voltage (Vdss)
MMIX1F44N100Q3 Applications
There are a lot of IXYS
MMIX1F44N100Q3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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