MJB45H11G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2005

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 8A

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

80V

ECCN Code :

EAR99

Max Power Dissipation :

50W

Transistor Application :

SWITCHING

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

80V

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

PNP

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Collector Cutoff (Max) :

10μA

Mounting Type :

Surface Mount

Transition Frequency :

40MHz

Voltage - Rated DC :

-80V

Number of Terminations :

2

Transistor Type :

PNP

Element Configuration :

Single

Terminal Form :

Gull wing

Base Part Number :

MJB45H11

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Emitter Saturation Voltage :

1V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

hFE Min :

60

Number of Elements :

1

Collector Base Voltage (VCBO) :

5V

Factory Lead Time :

2 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 4A 1V

Max Collector Current :

10A

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

REACH SVHC :

No SVHC

Frequency :

40MHz

Current Rating :

-10A

Pin Count :

3

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Lead Free :

Lead Free

Radiation Hardening :

No

Gain Bandwidth Product :

40MHz