MJB45H11G
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- Mfr.Part #
- MJB45H11G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS PNP 80V 10A D2PAK
- Stock
- 1,062
- In Stock ：
- 1,062
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 40MHz
- Max Collector Current :
- 10A
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Frequency :
- 40MHz
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- hFE Min :
- 60
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Transition Frequency :
- 40MHz
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 10μA
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation :
- 2W
- Current Rating :
- -10A
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Base Part Number :
- MJB45H11
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 1V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Power Dissipation :
- 50W
- Voltage - Rated DC :
- -80V
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- 5V
- Published :
- 2005
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Datasheets
- MJB45H11G
PNP -55°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
MJB45H11G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 40MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
MJB45H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz
MJB45H11G Applications
There are a lot of ON Semiconductor
MJB45H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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