MJB45H11

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Mfr.Part #
MJB45H11
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRANS PNP 80V 10A D2PAK
Stock
9,923
In Stock :
9,923

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
40MHz
Pbfree Code :
yes
Current Rating :
-10A
Collector Base Voltage (VCBO) :
5V
Radiation Hardening :
No
Base Part Number :
MJB45H11
RoHS Status :
ROHS3 Compliant
Surface Mount :
yes
Number of Pins :
3
hFE Min :
60
Terminal Finish :
Tin (Sn)
Polarity/Channel Type :
PNP
Published :
2005
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
1V
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Breakdown Voltage :
80V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Element Configuration :
Single
Power Dissipation :
2W
Factory Lead Time :
2 Weeks
Mounting Type :
Surface Mount
Lead Free :
Lead Free
Case Connection :
COLLECTOR
JESD-30 Code :
R-PSSO-G2
Emitter Base Voltage (VEBO) :
5V
Number of Terminations :
2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Max Power Dissipation :
50W
Terminal Form :
Gull wing
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Collector Emitter Voltage (VCEO) :
80V
Transistor Application :
SWITCHING
Frequency :
40MHz
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
10μA
Packaging :
Tube
Max Collector Current :
10A
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Gain Bandwidth Product :
40MHz
Voltage - Rated DC :
-80V
Datasheets
MJB45H11
Introducing Transistors - Bipolar (BJT) - Single onsemi MJB45H11 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJB45H11, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, MJB45H11 pinout, MJB45H11 datasheet PDF, MJB45H11 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJB45H11 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJB45H11


PNP -55°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount

MJB45H11G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 40MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

MJB45H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz


MJB45H11G Applications


There are a lot of ON Semiconductor
MJB45H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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