MJB41CT4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

5V

Height :

4.83mm

Published :

2005

Collector Emitter Voltage (VCEO) :

100V

Max Breakdown Voltage :

100V

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

100V

Transition Frequency :

3MHz

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Power Dissipation :

2W

Contact Plating :

Tin

Current Rating :

6A

Gain Bandwidth Product :

3MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

3MHz

Transistor Element Material :

SILICON

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Packaging :

Tape and Reel (TR)

Pin Count :

3

Element Configuration :

Single

Number of Pins :

3

Base Part Number :

MJB41

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Pbfree Code :

yes

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

700µA

Surface Mount :

yes

Factory Lead Time :

8 Weeks

Polarity :

NPN, PNP

Collector Base Voltage (VCBO) :

100V

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

1.5V

Number of Terminations :

2

Operating Temperature :

-65°C~150°C TJ

REACH SVHC :

No SVHC

Voltage - Rated DC :

100V

Max Power Dissipation :

65W

JESD-609 Code :

e3

Width :

9.65mm

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Length :

10.29mm

hFE Min :

30

Lead Free :

Lead Free

Max Collector Current :

6A

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A