MJB41CT4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

1.5V

ECCN Code :

EAR99

Current Rating :

6A

Max Breakdown Voltage :

100V

Number of Elements :

1

Published :

2005

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Case Connection :

COLLECTOR

Base Part Number :

MJB41

JESD-609 Code :

e3

Frequency :

3MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Gain Bandwidth Product :

3MHz

hFE Min :

30

Transistor Type :

NPN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Max Power Dissipation :

65W

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~150°C TJ

Pbfree Code :

yes

Polarity :

NPN, PNP

Current - Collector Cutoff (Max) :

700µA

Contact Plating :

Tin

Width :

9.65mm

JESD-30 Code :

R-PSSO-G2

Length :

10.29mm

Number of Terminations :

2

Collector Emitter Voltage (VCEO) :

100V

Radiation Hardening :

No

Height :

4.83mm

Collector Base Voltage (VCBO) :

100V

Voltage - Rated DC :

100V

Transistor Element Material :

SILICON

Element Configuration :

Single

Power Dissipation :

2W

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Transition Frequency :

3MHz

Number of Pins :

3

Max Collector Current :

6A

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)