MJB42CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

3MHz

Current Rating :

-6A

Collector Emitter Breakdown Voltage :

100V

Operating Temperature :

-65°C~150°C TJ

Height :

4.83mm

Gain Bandwidth Product :

3MHz

Element Configuration :

Single

Number of Terminations :

2

Published :

2005

Polarity :

PNP, NPN

Transition Frequency :

3MHz

Max Collector Current :

6A

Voltage - Rated DC :

-100V

Transistor Type :

PNP

Emitter Base Voltage (VEBO) :

5V

hFE Min :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Number of Elements :

1

Current - Collector Cutoff (Max) :

700µA

Collector Emitter Voltage (VCEO) :

100V

Width :

11.05mm

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

100V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Mounting Type :

Surface Mount

Radiation Hardening :

No

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Collector Base Voltage (VCBO) :

100V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

1.5V

Max Power Dissipation :

65W

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Power Dissipation :

2W

Lead Free :

Lead Free

Base Part Number :

MJB42

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Length :

10.29mm