MJB44H11T4-A
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- Mfr.Part #
- MJB44H11T4-A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A D2PAK
- Stock
- 13,274
- In Stock ：
- 13,274
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Max Power Dissipation :
- 50W
- Packaging :
- Cut Tape (CT)
- Max Breakdown Voltage :
- 80V
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mount :
- Surface Mount
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Power - Max :
- 50W
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 2
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- MJB44
- Transistor Type :
- NPN
- Max Collector Current :
- 10A
- Current - Collector Cutoff (Max) :
- 10μA
- Collector Emitter Voltage (VCEO) :
- 1V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Series :
- Automotive, AEC-Q101
- Datasheets
- MJB44H11T4-A
NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Cut Tape (CT) Surface Mount
MJB44H11T4-A Overview
In this device, the DC current gain is 40 @ 4A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 10A volts.
MJB44H11T4-A Features
the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
MJB44H11T4-A Applications
There are a lot of STMicroelectronics
MJB44H11T4-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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