MJB41CG
- Mfr.Part #
- MJB41CG
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A D2PAK
- Stock
- 42,834
- In Stock :
- 42,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 4.83mm
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Published :
- 2005
- Collector Emitter Breakdown Voltage :
- 100V
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Power Dissipation :
- 2W
- Number of Pins :
- 3
- Max Power Dissipation :
- 65W
- Length :
- 10.29mm
- JESD-30 Code :
- R-PSSO-G2
- Width :
- 9.65mm
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 700µA
- Gain Bandwidth Product :
- 3MHz
- Max Collector Current :
- 6A
- hFE Min :
- 30
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Voltage (VCEO) :
- 100V
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 100V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Transistor Element Material :
- SILICON
- Base Part Number :
- MJB41
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 3MHz
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transition Frequency :
- 3MHz
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 1.5V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Packaging :
- Tube
- Current Rating :
- 6A
- Datasheets
- MJB41CG

NPN -65°C~150°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
MJB41CG Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJB41CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJB41CG Applications
There are a lot of ON Semiconductor
MJB41CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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