MJB44H11
- Mfr.Part #
- MJB44H11
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A D2PAK
- Stock
- 9,624
- In Stock :
- 9,624
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 10A
- Transistor Type :
- NPN
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 10A
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 1V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Lead Free :
- Contains Lead
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 50MHz
- Peak Reflow Temperature (Cel) :
- 240
- Collector Emitter Voltage (VCEO) :
- 1V
- Transition Frequency :
- 50MHz
- HTS Code :
- 8541.29.00.75
- Number of Elements :
- 1
- Published :
- 2009
- Max Power Dissipation :
- 2W
- Voltage - Rated DC :
- 80V
- Terminal Form :
- Gull wing
- Packaging :
- Tube
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 10μA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- MJB44H11
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 2
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- hFE Min :
- 60
- Datasheets
- MJB44H11

NPN -55°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
MJB44H11 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 50MHz is present in the part.Collector current can be as low as 10A volts at its maximum.
MJB44H11 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJB44H11 Applications
There are a lot of ON Semiconductor
MJB44H11 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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