MJB41C
- Mfr.Part #
- MJB41C
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A D2PAK
- Stock
- 41,529
- In Stock :
- 41,529
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Packaging :
- Tube
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Height :
- 4.83mm
- Current - Collector Cutoff (Max) :
- 700µA
- hFE Min :
- 30
- Current Rating :
- 6A
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Transition Frequency :
- 3MHz
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 10.29mm
- Frequency :
- 3MHz
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 6A
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 2 Weeks
- Width :
- 9.65mm
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Max Power Dissipation :
- 65W
- Voltage - Rated DC :
- 100V
- Number of Terminations :
- 2
- Published :
- 2005
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Power Dissipation :
- 2W
- Base Part Number :
- MJB41
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Saturation Voltage :
- 1.5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MJB41C

NPN -65°C~150°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
MJB41CG Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJB41CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJB41CG Applications
There are a lot of ON Semiconductor
MJB41CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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