MJB41C
- Mfr.Part #
- MJB41C
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A D2PAK
- Stock
- 41,529
- In Stock :
- 41,529
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Width :
- 9.65mm
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 3MHz
- Voltage - Rated DC :
- 100V
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 700µA
- Collector Emitter Breakdown Voltage :
- 100V
- Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 100V
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 6A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Current Rating :
- 6A
- Length :
- 10.29mm
- Number of Elements :
- 1
- Pin Count :
- 3
- Height :
- 4.83mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Terminations :
- 2
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 65W
- Collector Emitter Voltage (VCEO) :
- 100V
- Published :
- 2005
- Power Dissipation :
- 2W
- REACH SVHC :
- No SVHC
- hFE Min :
- 30
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- MJB41
- Collector Emitter Saturation Voltage :
- 1.5V
- Datasheets
- MJB41C

NPN -65°C~150°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
MJB41CG Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJB41CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJB41CG Applications
There are a lot of ON Semiconductor
MJB41CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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