MJ11028
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- Mfr.Part #
- MJ11028
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 50A TO204
- Stock
- 590
- In Stock ：
- 590
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~200°C TJ
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Terminal Form :
- PIN/PEG
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN - Darlington
- Case Connection :
- COLLECTOR
- Continuous Collector Current :
- 50A
- JESD-609 Code :
- e1
- Voltage - Rated DC :
- 50V
- Mounting Type :
- Through Hole
- Packaging :
- Tray
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 25A 5V
- Published :
- 2002
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 300W
- Factory Lead Time :
- 2 Weeks
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Pin Count :
- 2
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Polarity :
- NPN
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- No
- Max Collector Current :
- 50A
- Current - Collector Cutoff (Max) :
- 2mA
- Collector Emitter Saturation Voltage :
- 2.5V
- Package / Case :
- TO-204AE
- Number of Pins :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 500mA, 50A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 50A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Datasheets
- MJ11028
NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole
MJ11028G Overview
In this device, the DC current gain is 1000 @ 25A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 500mA, 50A.A 50A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50A for this device.Single BJT transistor is possible for the collector current to fall as low as 50A volts at Single BJT transistors maximum.
MJ11028G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11028G Applications
There are a lot of ON Semiconductor
MJ11028G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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