MJ11021

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Factory Lead Time :

2 Weeks

Height :

8.51mm

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

3.4V @ 150mA, 15A

DC Current Gain (hFE) (Min) @ Ic, Vce :

400 @ 10A 5V

Collector Emitter Voltage (VCEO) :

250V

Power - Max :

175W

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

2V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Terminal Form :

PIN/PEG

Terminal Position :

BOTTOM

Power Dissipation :

150W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Type :

PNP - Darlington

Operating Temperature :

-65°C~200°C TJ

Polarity :

PNP

Surface Mount :

No

JESD-609 Code :

e3

Number of Terminations :

2

Collector Emitter Breakdown Voltage :

250V

Case Connection :

COLLECTOR

Element Configuration :

Single

Pin Count :

2

Max Collector Current :

15A

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

6MHz

Current Rating :

-15A

Package / Case :

TO-204AA, TO-3

Voltage - Rated DC :

-250V

Number of Pins :

2

Width :

26.67mm

Current - Collector Cutoff (Max) :

1mA

Length :

39.37mm

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.40101g

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

hFE Min :

100

Mounting Type :

Through Hole

Pbfree Code :

yes

Max Power Dissipation :

175W

Collector Base Voltage (VCBO) :

250V

Published :

2005

Packaging :

Tray

Number of Elements :

1