MJ11015G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Polarity :

PNP

Surface Mount :

No

Power Dissipation :

200W

Contact Plating :

Tin

Terminal Position :

BOTTOM

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP - Darlington

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 20A 5V

Max Collector Current :

30A

Terminal Form :

PIN/PEG

Frequency - Transition :

4MHz

Vce Saturation (Max) @ Ib, Ic :

4V @ 300mA, 30A

Height :

8.51mm

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Width :

26.67mm

Max Power Dissipation :

200W

Package / Case :

TO-204AA, TO-3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

120V

Collector Emitter Saturation Voltage :

3V

Case Connection :

COLLECTOR

Pbfree Code :

yes

Element Configuration :

Single

Factory Lead Time :

2 Weeks

Weight :

4.535924g

Transition Frequency :

4MHz

Number of Terminations :

2

Radiation Hardening :

No

Pin Count :

2

Collector Base Voltage (VCBO) :

120V

Length :

39.37mm

Voltage - Rated DC :

-120V

Operating Temperature :

-55°C~200°C TJ

Collector Emitter Voltage (VCEO) :

120V

Lead Free :

Lead Free

Continuous Collector Current :

30A

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2008

Number of Pins :

2

hFE Min :

1000

Packaging :

Tray

Mounting Type :

Through Hole

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current Rating :

-30A

Current - Collector Cutoff (Max) :

1mA