MJ11015G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 20A 5V

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

1mA

Power Dissipation :

200W

ECCN Code :

EAR99

JESD-609 Code :

e3

Packaging :

Tray

Radiation Hardening :

No

Weight :

4.535924g

hFE Min :

1000

Package / Case :

TO-204AA, TO-3

Terminal Position :

BOTTOM

Length :

39.37mm

Factory Lead Time :

2 Weeks

Voltage - Rated DC :

-120V

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Max Collector Current :

30A

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

-55°C~200°C TJ

Transistor Element Material :

SILICON

Current Rating :

-30A

Number of Pins :

2

Pin Count :

2

Width :

26.67mm

Contact Plating :

Tin

Transistor Type :

PNP - Darlington

Number of Terminations :

2

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

4V @ 300mA, 30A

Element Configuration :

Single

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Pbfree Code :

yes

Case Connection :

COLLECTOR

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

120V

Height :

8.51mm

Collector Emitter Breakdown Voltage :

120V

Terminal Form :

PIN/PEG

Max Power Dissipation :

200W

Frequency - Transition :

4MHz

Transition Frequency :

4MHz

Collector Emitter Saturation Voltage :

3V

Collector Base Voltage (VCBO) :

120V

Continuous Collector Current :

30A