MJ11015G

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Mfr.Part #
MJ11015G
Manufacturer
onsemi
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
TRANS PNP DARL 120V 30A TO204
Stock
33
In Stock :
33

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Polarity :
PNP
Surface Mount :
No
Power Dissipation :
200W
Contact Plating :
Tin
Terminal Position :
BOTTOM
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP - Darlington
REACH SVHC :
No SVHC
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 20A 5V
Max Collector Current :
30A
Terminal Form :
PIN/PEG
Frequency - Transition :
4MHz
Vce Saturation (Max) @ Ib, Ic :
4V @ 300mA, 30A
Height :
8.51mm
ECCN Code :
EAR99
Transistor Application :
AMPLIFIER
Width :
26.67mm
Max Power Dissipation :
200W
Package / Case :
TO-204AA, TO-3
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Collector Emitter Breakdown Voltage :
120V
Collector Emitter Saturation Voltage :
3V
Case Connection :
COLLECTOR
Pbfree Code :
yes
Element Configuration :
Single
Factory Lead Time :
2 Weeks
Weight :
4.535924g
Transition Frequency :
4MHz
Number of Terminations :
2
Radiation Hardening :
No
Pin Count :
2
Collector Base Voltage (VCBO) :
120V
Length :
39.37mm
Voltage - Rated DC :
-120V
Operating Temperature :
-55°C~200°C TJ
Collector Emitter Voltage (VCEO) :
120V
Lead Free :
Lead Free
Continuous Collector Current :
30A
Time@Peak Reflow Temperature-Max (s) :
40
Published :
2008
Number of Pins :
2
hFE Min :
1000
Packaging :
Tray
Mounting Type :
Through Hole
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Current Rating :
-30A
Current - Collector Cutoff (Max) :
1mA
Datasheets
MJ11015G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJ11015G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-204AA, TO-3, Number of Terminations:2, Operating Temperature:-55°C~200°C TJ, Number of Pins:2, Mounting Type:Through Hole, MJ11015G pinout, MJ11015G datasheet PDF, MJ11015G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJ11015G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJ11015G


PNP - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole

MJ11015G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 20A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 4V @ 300mA, 30A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 30A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -30A.In the part, the transition frequency is 4MHz.A maximum collector current of 30A volts can be achieved.

MJ11015G Features


the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is -30A
a transition frequency of 4MHz


MJ11015G Applications


There are a lot of ON Semiconductor
MJ11015G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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