MJ11015G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

2

Collector Emitter Saturation Voltage :

3V

Collector Emitter Breakdown Voltage :

120V

Pbfree Code :

yes

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Terminal Form :

PIN/PEG

Terminal Position :

BOTTOM

Height :

8.51mm

Contact Plating :

Tin

Transistor Type :

PNP - Darlington

ECCN Code :

EAR99

Operating Temperature :

-55°C~200°C TJ

hFE Min :

1000

Element Configuration :

Single

Pin Count :

2

Length :

39.37mm

Transistor Application :

AMPLIFIER

Frequency - Transition :

4MHz

Transistor Element Material :

SILICON

Transition Frequency :

4MHz

Published :

2008

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Packaging :

Tray

Weight :

4.535924g

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Number of Elements :

1

Max Collector Current :

30A

Package / Case :

TO-204AA, TO-3

Max Power Dissipation :

200W

Width :

26.67mm

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 20A 5V

Vce Saturation (Max) @ Ib, Ic :

4V @ 300mA, 30A

Surface Mount :

No

Voltage - Rated DC :

-120V

Power Dissipation :

200W

Number of Terminations :

2

Collector Base Voltage (VCBO) :

120V

Collector Emitter Voltage (VCEO) :

120V

JESD-609 Code :

e3

Current Rating :

-30A

Factory Lead Time :

2 Weeks

Polarity :

PNP

Current - Collector Cutoff (Max) :

1mA

Continuous Collector Current :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260