MJ11015G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Continuous Collector Current :

30A

Package / Case :

TO-204AA, TO-3

Current Rating :

-30A

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Published :

2008

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

120V

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Transition Frequency :

4MHz

Weight :

4.535924g

Length :

39.37mm

Radiation Hardening :

No

Lead Free :

Lead Free

Terminal Form :

PIN/PEG

Terminal Position :

BOTTOM

Max Power Dissipation :

200W

Vce Saturation (Max) @ Ib, Ic :

4V @ 300mA, 30A

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

200W

Width :

26.67mm

Number of Pins :

2

hFE Min :

1000

Voltage - Rated DC :

-120V

Transistor Type :

PNP - Darlington

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tray

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

120V

Number of Elements :

1

Height :

8.51mm

ECCN Code :

EAR99

Pin Count :

2

Polarity :

PNP

Element Configuration :

Single

Factory Lead Time :

2 Weeks

Collector Emitter Voltage (VCEO) :

120V

REACH SVHC :

No SVHC

Max Collector Current :

30A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 20A 5V

Current - Collector Cutoff (Max) :

1mA

Collector Emitter Saturation Voltage :

3V

Frequency - Transition :

4MHz

Contact Plating :

Tin

Operating Temperature :

-55°C~200°C TJ