MJ11012
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- Mfr.Part #
- MJ11012
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 30A TO3
- Stock
- 50
- In Stock ：
- 50
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 30A
- Published :
- 2008
- Terminal Position :
- BOTTOM
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Current Rating :
- 30A
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 26.67mm
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Pin Count :
- 2
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Max Collector Current :
- 30A
- Pbfree Code :
- yes
- Packaging :
- Tray
- Number of Pins :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 1mA
- Operating Temperature :
- -55°C~200°C TJ
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Transistor Type :
- NPN - Darlington
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 20A 5V
- Max Power Dissipation :
- 200W
- Power Dissipation :
- 200W
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Transition Frequency :
- 4MHz
- Length :
- 39.37mm
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Width :
- 8.509mm
- Frequency - Transition :
- 4MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-204AA, TO-3
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- PIN/PEG
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Polarity :
- NPN
- Collector Emitter Saturation Voltage :
- 4V
- Number of Terminations :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 300mA, 30A
- Datasheets
- MJ11012
NPN - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11012G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 20A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 300mA, 30A.Continuous collector voltages of 30A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 30A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 30A volts.
MJ11012G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 4MHz
MJ11012G Applications
There are a lot of ON Semiconductor
MJ11012G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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