MJ11016
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- Mfr.Part #
- MJ11016
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 30A TO3
- Stock
- 50
- In Stock ：
- 50
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN - Darlington
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 300mA, 30A
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 3V
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Width :
- 26.67mm
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Breakdown Voltage :
- 120V
- Continuous Collector Current :
- 30A
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 20A 5V
- Case Connection :
- COLLECTOR
- Packaging :
- Tray
- REACH SVHC :
- No SVHC
- Current Rating :
- 30A
- Current - Collector Cutoff (Max) :
- 1mA
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Polarity :
- NPN
- Voltage - Rated DC :
- 120V
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 120V
- Max Collector Current :
- 30A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- PIN/PEG
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~200°C TJ
- RoHS Status :
- ROHS3 Compliant
- Height :
- 8.51mm
- Number of Pins :
- 2
- Transistor Application :
- AMPLIFIER
- Published :
- 2006
- ECCN Code :
- EAR99
- Frequency - Transition :
- 4MHz
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Power Dissipation :
- 200W
- Max Power Dissipation :
- 200W
- Lifecycle Status :
- ACTIVE (Last Updated: 11 hours ago)
- Package / Case :
- TO-204AA, TO-3
- Length :
- 39.37mm
- Number of Terminations :
- 2
- Factory Lead Time :
- 2 Weeks
- Pin Count :
- 2
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 4MHz
- Datasheets
- MJ11016
MJ11016 Documents
NPN - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11016G Overview
This device has a DC current gain of 1000 @ 20A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 3V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 30A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 30A.In this part, there is a transition frequency of 4MHz.The maximum collector current is 30A volts.
MJ11016G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 4MHz
MJ11016G Applications
There are a lot of ON Semiconductor
MJ11016G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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